Controlling fluorescence quenching efficiency by graphene oxide in supported lipid bilayers using SiO<sub>2</sub> layer fabricated by atomic layer deposition
نویسندگان
چکیده
Abstract The SiO 2 layer fabricated by the atomic deposition (ALD) method was applied to control efficiency of fluorescence quenching graphene oxide (GO) in supported lipid bilayers (SLBs). SLB formed vesicle fusion on ALD-SiO GO deposited thermally oxidized /Si substrates. Wide-field observation layers with various thicknesses showed that varied reasonable distance dependence expected from equation Förster resonance energy transfer. Fluorescence single molecular dye-labeled lipids achieved existing effective range GO. Quenching experiment using Co 2+ selectively quenches upper leaflet revealed difference intensity between and lower leaflets due their
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2023
ISSN: ['0021-4922', '1347-4065']
DOI: https://doi.org/10.35848/1347-4065/acaed4